Título/Appointment: Assistant professor
Departamento/Department: Department of Mathematics-Physics
Institución/Institution: UPR-Cayey (USA)
E-mail: danilo.barrionuevo@upr.edu
Teléfono/Phone: (787) 738-2161, ext. 3125
Reseña/Biosketch:
As an expert in the field of materials science, my proposed endeavor is to continue my research on designing high-performance electronic synapses to implement a neuromorphic system on hardware, for improved information processing, task completion, energy usage, and speed. My proposed endeavor is of great importance for the field because it increases the ability to store large amounts of complex data. This is especially relevant in the modern era, where the public and private sectors generate, store, and analyze large quantities of data in order to improve services. This trend is particularly noticeable in the healthcare industry, NASA and Internet of Things (IoT) applications. My proposed research, which will focus on designing high-performance electronic synapses for neuromorphic systems, will therefore leverage my expertise and previous work in the fields of multiferroics for memory devices (e.g., master’s, doctoral and current research at the University of Puerto Rico at Cayey, USA); the development of novel memory storage devices, in particular, will be key for ensuring that these industries are able to store and process such large quantities of information. The successful demonstration of these concepts and implementation will have a broad impact on many industries and society. Further, during the years that I have been working as an assistant professor, I have remained an active and peer-recognized researcher in the field. I have also initiated efforts towards starting my research group and mentoring student researchers. As a professor and research mentor, I aim to provide the students a fruitful and enjoyable research experience, and to prepare them for the years to come, either as professionals or graduate students; such research experiences are especially beneficial for students who may want to continue their graduate studies.
Perfiles en línea/Online profiles:
ORCID: https://orcid.org/0000-0001-6900-8789
LinkedIn: https://www.linkedin.com/in/danilo-g-barrionuevo-diestra-a00897123/?originalSubdomain=pr
Google Scholar: https://scholar.google.com.pe/citations?user=P6V5EQ4AAAAJ&hl=en
Preparación Académica/Education:
Ph.D. in Chemical-Physics, GPA 3.8
University of Puerto Rico-Río Piedras
Dissertation title: Studies on ferroelectric and multiferroic materials for tunnel junction applications
M.Sc. in Physics, GPA 3.9
University of Puerto Rico-Mayagüez
Thesis title: Multiferroic properties of magnetic-ion-substituted oxide-electroceramic thin films
B.Sc. in Physics, 14.5 on a 20 scale
National University of Trujillo Alto-Perú
Áreas de investigación/Research Interests:
Materials Science
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- I was awarded the amount of $ 9,234.00 for my proposal titled “Nanoscale ferroelectric and multiferroic properties for multilevel data storage and neuromorphic engineering” in the “Institutional Fund for Research Development,” at the University of Puerto Rico at Cayey (USA), for the period from January 2020 to May 2021.
- My proposal for $ 5,000.00 was approved, which was titled as “Ferroelectric tunnel junction for neuromorphic computing device: Impact on space operations” in the Puerto Rico NASA Space Grant Consortium Program for the UPR at Cayey (USA), for the period from September 2019 to May 2020.
- I won the amount of $ 6,350.00 for proposal titled “Ferroelectric and multiferroic tunnel junctions make them promising candidates for future information storage technology” in the “Institutional Fund for Research Development,” at the University of Puerto Rico at Cayey (USA), for the period from October 2018 to May 2019.
Publicaciones/Publications:
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- Barrionuevo D, Ortega N, Sanchez D, Kumar A, Pichardo P, Arocho N, Romero L, Melendez L, Katiyar R. Nanoscale Multiferroic Properties at Room Temperature of Lead Zirconate Titanate Iron Tantalate for Memory Device Applications. Integrated Ferroelectrics. 2021 December 14; 221(1):53-63. Available from:
https://www.tandfonline.com/doi/full/10.1080/10584587.2021.1965832 DOI:
10.1080/10584587.2021.1965832 - Barrionuevo D, Zhang L, Ortega N, Sokolov A, Kumar A, Scott J, Katiyar R. Enhanced
tunneling electroresistance in Pt/PZT/LSMO ferroelectric tunnel junctions in presence of
magnetic field. Integrated Ferroelectrics. 2016 July 13; 174(1):174-185. Available from:
http://www.tandfonline.com/doi/full/10.1080/10584587.2016.1196053 DOI:
10.1080/10584587.2016.1196053 - Kumar A, Barrionuevo D, Ortega N, Shukla A, Shannigrahi S, Scott J, Katiyar R. Ferroelectric capped magnetization in multiferroic PZT/LSMO tunnel junctions. Applied Physics Letters. 2015 March 30; 106(13):132901-. Available from:
http://aip.scitation.org/doi/10.1063/1.4916732 DOI: 10.1063/1.4916732 - Barrionuevo D, Zhang L, Ortega N, Sokolov A, Kumar A, Misra P, Scott J, Katiyar R.
Tunneling electroresistance in multiferroic heterostructures. Nanotechnology.
2014 December 12; 25(49):495203-. Available from:
https://iopscience.iop.org/article/10.1088/0957-4484/25/49/495203 DOI: 10.1088/0957-
4484/25/49/495203 - Barrionuevo D, Ortega N, Kumar A, Chatterjee R, Scott J, Katiyar R. Thickness dependent
functional properties of PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3 heterostructures. Journal of Applied Physics. 2013 December 21; 114(23):234103-. Available from:
http://aip.scitation.org/doi/10.1063/1.4848017 DOI: 10.1063/1.4848017
- Barrionuevo D, Ortega N, Sanchez D, Kumar A, Pichardo P, Arocho N, Romero L, Melendez L, Katiyar R. Nanoscale Multiferroic Properties at Room Temperature of Lead Zirconate Titanate Iron Tantalate for Memory Device Applications. Integrated Ferroelectrics. 2021 December 14; 221(1):53-63. Available from:
Complete List of Published Work in My ORCID, LinkedIn, and Google Scholar profiles:
ORCID: https://orcid.org/0000-0001-6900-8789
LinkedIn: https://www.linkedin.com/in/danilo-g-barrionuevo-diestra-a00897123/?originalSubdomain=pr
Google Scholar: https://scholar.google.com.pe/citations?user=P6V5EQ4AAAAJ&hl=en